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Halomos with ultra fast recovery Low VF body diode

Halomos with ultra fast recovery Low VF body diode

Halomos with ultra fast recovery Low VF body diode

Overview
1. SGT process
2. Qg is small, conduction resistance is small, Qrr and Trr are small, and reverse recovery is faster
3. The product covers 30-200V products with a current of 200A.
4. The voltage of the reverse body diode decreases by only about 30% -50% compared to traditional field-effect transistors Specially used for high current synchronous rectification, it is more energy-efficient and energy-saving than traditional same impedance field-effect transistors, with lower reverse turn off peak voltage 2) Used for bridge circuits, it is easier to support high-frequency applications and has a smaller dead time setting to improve efficiency and reduce the risk of direct explosion 3) Used for non isolated DC-DC boost/buck circuits, with high energy efficiency, power-saving, and low temperature.
Part Number

Technology

Product status

Polarity

BVDSS(V)

ID(A)

VTH(V)

RDS(ON)@10VTyp(mΩ)

RDS(ON)@4.5VTyp(mΩ)

QG(nC)

PD(W)

Qrr(nC)

Trr(nS)

Body diode VF(V)

Package

Datasheet